| PART |
Description |
Maker |
| TLP590B07 TLP590B |
Telecommunication Programmable Controllers Mos Gate Driver MOS FET Gate Driver
|
Toshiba Semiconductor
|
| BF998A BF998B BF998RA BF998RAW BF998RB BF998RBW BF |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管，耗尽
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
RES,Metal Glaze,33.2Ohms,200WV,1 /-% Tol,-100,100ppm-TC,1210-Case RoHS Compliant: No
N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode
From old datasheet system
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
Vishay Telefunken
VISAY[Vishay Siliconix]
|
| SI3035 SI3021-BS SI3021-KS SI3021-KT SI3024-KT SI3 |
3.3 V FCC/JATE DIRECT ACCESS ARRANGEMENT
3.3V FCC/JATE direct access arrangement, digital interface
3.3 V FCC/JATE DAA (Direct Access Arrangement) digital interface
|
Silicon Laboratories
|
| TLP250F |
TRANSISTOR INVERTER FOR AIR CONDITIONOR IGBT GATE DRIVE POWER MOS FET GATE DRIVE
|
Toshiba Corporation
Toshiba Semiconductor
|
| APT5017BLC APT5017SLC APT10086BLC APT10086SLC |
POWER MOS VI 500V 30A 0.170 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| SI3068-B-FS |
FCC EMBEDDED DIRECT ACCESS ARRANGEMENT
|
Silicon Laboratories
|
| LC7150 |
FCC 10-Channel Standard PLL For Cordless Telephone
|
SANYO[Sanyo Semicon Device]
|
| CXD8813Q |
C-MOS GATE ARRAY
|
ETC
|
| CXD8862Q |
C-MOS GATE ARRAY
|
ETC
|
| 3SK249 E001708 |
N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF AMPLIFIER APPLICATIONS)
N CHANNEL DUAL GATE MOS TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba Semiconductor
Sanyo Semicon Device
|
